RF Power Transistor Packs 1.5 kW. Chiseled for UHF pulsed radar applications, the Model 0405SC-1500M RF power transistor exploits state-of-the-art SiC technology to provide 1,500W of peak power in a compact single-ended package that replaces push-pull balun circuitry found in conventional silicon BJT or LDMOS designs. The device is a common gate, class AB transistor designed for UHF frequencies from 406 MHz to 450 MHz. It is built with 100% gold metallization and gold wires in a hermetically sealed package suitable for use in weather radar and over the horizon radar applications. Other features include a medium pulse format of 300 µs at 6%, a typical power gain of 8 dB, and a drain efficiency of 45% at 450 MHz. MICROSEMI CORP., Irvine, CA. (800) 713-4113.
High power HF combiner OM10C The high power combiner OM10C is designed for all short wave amateur bands from 1.8 to 29.7 MHz and maximum 10kW PEP output power.
Specification of OM10C:
OM4001A HF Linear Amplifier The OM Power model OM4001A is an automatic power amplifier, designed for use on all short wave amateur bands from 1.8 to 29.7 MHz (including WARC bands) and all modes. It is equipped with a two pieces...
BURST-2000A LDMOS Power Amplifier "BURST-2000A" - Russian LDMOS HF Linear Power Amplifier - 2,2 KWT. 1.8 - 50 MHz. with (CWS) cooling water system.
Video (Russian Language)
Exclusive photos (Copyright...